Typical Electrical Characteristics
12
2
V GS =10V
6.0
5.0
V GS =3.5V
4.5
9
4.0
1.5
4.0
4.5
6
5.0
3
3.5
3.0
1
6.0
10
0
0
1
2
3
4
0.5
0
3
6
9
12
V DS , DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
1.6
Figure 1. On-Region Characteristics
I D = 1.6A
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current
3
V GS = 4.5V
1.4
1.2
1
V
GS
=4.5V
2.5
2
1.5
T J = 125°C
25°C
-55°C
0.8
1
0.6
-50
-25
0
25
50
75
100
125
150
0.5
0
2
4
6
8
10
12
10
T J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature
1.2
I D , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Drain
Current and Temperature
8
V DS = 10V
T J = -55°C
25°C
125°C
1.1
V DS = V GS
I D = 250μA
1
6
0.9
4
0.8
2
0.7
0
1
2
3
4
5
6
0.6
-50
-25
0
25
50
75
100
125
150
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
T J , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation with
Temperature
NDS355N Rev. D1
相关PDF资料
NDS7002A MOSFET N-CH 60V 280MA SOT-23
NDS8425 MOSFET N-CH 20V 7.4A 8SOIC
NDS8434 MOSFET P-CH 20V 6.5A 8-SOIC
NDS8947 MOSFET 2P-CH 30V 4A 8-SOIC
NDS9400A MOSFET P-CH 30V 3.4A 8-SOIC
NDS9407 MOSFET P-CH 60V 3A 8-SOIC
NDS9945 MOSFET 2N-CH 60V 3.5A 8-SOIC
NDS9948 MOSFET 2P-CH 60V 2.3A 8-SOIC
相关代理商/技术参数
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
NDS355N_D87Z 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS356 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS356AP 功能描述:MOSFET P-Channel Logic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS356AP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS356AP_L99Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS356AP_NB8L005A 制造商:Fairchild Semiconductor Corporation 功能描述:TRANS MOSFET P-CH 30V 1.1A 3PIN SUPERSOT - Tape and Reel